Postek, M.
and Vladar, A.
(2001),
Critical Dimension Metrology in the Scanning Electron Microscope, CRC Press,
(Accessed April 25, 2024)
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Critical Dimension Metrology in the Scanning Electron Microscope
Published
Author(s)
,
Abstract
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130, 100 nanometer and even smaller linewidths and high aspect ratio structures, the scanning electron microscope (SEM) remains an important tool, which is extensively used in many phases of semiconductor manufacturing throughout the world. The SEM provides higher resolution analysis and inspection than that are possible by current techniques using the optical microscope and higher throughputs than scanned probe techniques. Furthermore, the SEM offers a wide variety of analytical modes, each contributing unique information regarding the physical, chemical and electrical properties of a particular specimen, device or circuit. Due to recent developments scientist and engineers are finding and putting into practice new, very accurate and fast SEM based measuring methods in research and production of microelectronic devices.Citation
Chapter in: Handbook of Silicon Semiconductor Metrology, A.C. Diebold
Publisher Info
CRC Press,
Pub Type
Books
Keywords
backscattered, calibration, critical dimensions, electrons, metrology, scanning electron microscope, standards
Citation
Created June 28, 2001, Updated October 12, 2021