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|Author(s):||Yaw S. Obeng; Stephen Knight; Joaquin (. Martinez;|
|Published:||May 18, 2008|
|Abstract:||Nanoelectronics require the introduction of several new uncharacterized material(s) combinations and new processing techniques. The critical metrology and characterization needs of the nanoelectronics industry are being addressed with a broad range of development programs at the National Institute of Standards and Technology (NIST). In this paper, we provide an overview of the recent advances in nanoelectronics enabling metrology developments at NIST. We will discuss a broad range of new techniques, equipment and infrastructure that are being developed to enable atomic and nano-scale measurements. Examples include, but are not limited to, high resolution, low noise, EDS techniques and infrastructure for nanoscale chemical analysis; metrology for characterizing device and material intrinsic reliability, electrical, optical and physical characterization of novel materials and monitoring of processes. We will also present a status report on the ongoing collaborative efforts in defining the beyond complementary metal¿oxide¿semiconductor (CMOS) architecture. In addition, detailed technical papers from NIST on some of the topics reviewed in this talk will also be presented in this symposium. The objective of this collection of presentations is to inform the nanoelectronincs industry on these programs. We would also welcome feedback, where appropriate, from the industry. Submit your feedback on NIST¿s semiconductor nanoelectronics projects at http://www.eeel.nist.gov/omp/survey.pdf.|
|Conference:||213th ECS Meeting|
|Pages:||pp. 101 - 112|
|Dates:||May 18-22, 2008|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|