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|Author(s):||Jose M. Ortiz; Tam H. Duong; Angel Rivera-Lopez; Allen R. Hefner Jr.;|
|Title:||High-Voltage, High-Frequency SiC Power MOSFETs Model Validation|
|Published:||June 21, 2007|
|Abstract:||Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script written in AIM language incorporated in the Saber? circuit simulator. Data from the IMPACT tools and from laboratory measurements is compared against the circuit simulator models output. Measured versus simulated results are presented for different samples of 10-kV SiC power MOSFET device designs produced by Cree Inc. during Phase 2 of the DARPA Wide Band-gap Semiconductor Technology High Power Electronics (WBST-HPE) program.|
|Conference:||Power Electronics Specialist Conference|
|Proceedings:||Proc., Power Electronics Specialist Conference|
|Pages:||pp. 1018 - 1022|
|Dates:||June 17-21, 2007|
|Keywords:||4H-SiC power MOSFETs,models,silicon cabide,Simulated,validation|
|PDF version:||Click here to retrieve PDF version of paper (470KB)|