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Publication Citation: High-Voltage, High-Frequency SiC Power MOSFETs Model Validation

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Author(s): Jose M. Ortiz; Tam H. Duong; Angel Rivera-Lopez; Allen R. Hefner Jr;
Title: High-Voltage, High-Frequency SiC Power MOSFETs Model Validation
Published: June 21, 2007
Abstract: Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script written in AIM language incorporated in the Saber? circuit simulator. Data from the IMPACT tools and from laboratory measurements is compared against the circuit simulator models output. Measured versus simulated results are presented for different samples of 10-kV SiC power MOSFET device designs produced by Cree Inc. during Phase 2 of the DARPA Wide Band-gap Semiconductor Technology High Power Electronics (WBST-HPE) program.
Conference: Power Electronics Specialist Conference
Proceedings: Proc., Power Electronics Specialist Conference
Pages: pp. 1018 - 1022
Location: Orlando, FL
Dates: June 17-21, 2007
Keywords: 4H-SiC power MOSFETs;models;silicon cabide;Simulated;validation
Research Areas:
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