NIST logo

Publication Citation: Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

NIST Authors in Bold

Author(s): Behrang H. Hamadani; R J. Kline; Iain McCulloch; Martin Heeney; Curt A. Richter; David J. Gundlach;
Title: Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
Published: August 21, 2007
Abstract: We report on a strong field-dependent mobility in OFETs fabricated by using poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. First, we show that the contact effects in both sets of devices are negligible from room temperature down to ~100 K. Then we show that this field-dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices is modeled consistently in the Poole-Frenkel framework, over a broad temperature range.
Citation: Journal of Applied Physics
Volume: 102
Pages: pp. 044503-1 - 044503-7
Keywords: charge transport;organic field-effect transistors;organic semiconductor;Poole-Frenkel effect;TFT
Research Areas: