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|Author(s):||Qiliang Li; Xiaoxiao Zhu; Hao Xiong; Sang-Mo Koo; D. E. Ioannou; Joseph J. Kopanski; John S. Suehle; Curt A. Richter;|
|Title:||Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application|
|Published:||May 16, 2007|
|Abstract:||We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible Write/Read/Erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.|
|Keywords:||non-volatile memory,retention,Silicon nanowire,SONOS|
|PDF version:||Click here to retrieve PDF version of paper (947KB)|