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Publication Citation: Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application

NIST Authors in Bold

Author(s): Qiliang Li; Xiaoxiao Zhu; Hao Xiong; Sang-Mo Koo; D. E. Ioannou; Joseph J. Kopanski; John S. Suehle; Curt A. Richter;
Title: Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application
Published: May 16, 2007
Abstract: We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible Write/Read/Erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated.
Citation: Nanotechnology
Volume: 18
Issue: 235204
Pages: 4 pp.
Keywords: non-volatile memory,retention,Silicon nanowire,SONOS
Research Areas:
PDF version: PDF Document Click here to retrieve PDF version of paper (947KB)