| Author(s): |
Qiliang Li; Xiaoxiao Zhu; Hao Xiong; Sang-Mo Koo; D. E. Ioannou; Joseph J. Kopanski; John S. Suehle; Curt A. Richter; |
| Title: |
Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application |
| Published: |
May 16, 2007 |
| Abstract: |
We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to the Si nanowires grown on pre-defined locations. A large memory window with high on/off-state current ratio due to the small radius and intrinsic doping of the Si nanowire is obtained. In addition, the simple reversible Write/Read/Erase operations have been implemented with these memory devices. The dynamics of the nanowire/nitride charge exchange and its effect on the threshold voltage and memory retention have been investigated. |
| Citation: |
Nanotechnology |
| Volume: |
18 |
| Issue: |
235204 |
| Pages: |
4 pp. |
| Keywords: |
non-volatile memory;retention;Silicon nanowire;SONOS |
| Research Areas: |
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| PDF version: |
 Click here to retrieve PDF version of paper (925KB) |
