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|Author(s):||Janet M. Cassard; Paul T. Vernier;|
|Title:||Electro-physical Technique for Post-fabrication Measurements of CMOS Process Layer Thicknesses|
|Published:||October 01, 2007|
|Abstract:||This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5-um complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical step height measurements performed on thickness test structures and from electrical measurements of capacitances, sheet resistances, and resistivities. Appropriate expressions, numeric values, and uncertainties for each layer thickness are presented, along with a systematic nomenclature for interconnect and dielectric thicknesses.|
|Citation:||Journal of Research (NIST JRES) -|
|Pages:||pp. 223 - 256|
|Keywords:||CMOS,MEMS,nomenclature,platform height,step height,test structures,thickness,Young''''s modulus|
|PDF version:||Click here to retrieve PDF version of paper (980KB)|