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Publication Citation: Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

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Author(s): Byron J. Shulver; Andrew S. Bunting; Alan Gundlach; Les I. Haworth; Alan W. Ross; A. J. Smith; Anthony J. Snell; J. T. Stevenson; Anthony Walton; Michael W. Cresswell; Richard A. Allen;
Title: Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms
Published: March 22, 2007
Abstract: Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for determining CD values and enable fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier-metal films. This paper reports on the results of various tests which have been conducted to fully evaluate the current design.
Proceedings: 2007 International Conference on Microlectronic Test Structures
Pages: pp. 14 - 19
Location: Tokyo, JA
Dates: March 19-22, 2007
Keywords: barrier metal;CD;copper;Integrated circuit;interconnect;metrology;Test Structure
Research Areas: Semiconductors
PDF version: PDF Document Click here to retrieve PDF version of paper (331KB)