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|Author(s):||Byron J. Shulver; Andrew S. Bunting; Alan Gundlach; Les I. Haworth; Alan W. Ross; A. J. Smith; Anthony J. Snell; J. T. Stevenson; Anthony Walton; Michael W. Cresswell; Richard A. Allen;|
|Title:||Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms|
|Published:||March 22, 2007|
|Abstract:||Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for determining CD values and enable fundamental studies of electron transport in narrow copper features unaffected by the complications of barrier-metal films. This paper reports on the results of various tests which have been conducted to fully evaluate the current design.|
|Proceedings:||2007 International Conference on Microlectronic Test Structures|
|Pages:||pp. 14 - 19|
|Dates:||March 19-22, 2007|
|Keywords:||barrier metal,CD,copper,Integrated circuit,interconnect,metrology,Test Structure|
|PDF version:||Click here to retrieve PDF version of paper (331KB)|