Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Intrinsic Electronic Conduction Mechanisms in Self-Assembled Monolayers

NIST Authors in Bold

Author(s): Wenyong Wang; Takhee Lee;
Title: Intrinsic Electronic Conduction Mechanisms in Self-Assembled Monolayers
Published: December 21, 2005
Abstract: A review on the mechanisms and characterization methods of molecu- lar electronic transport is presented. Using self-assembled monolayers (SAMs) of alkanethiols in a nanometer scale device structure, tunneling is unambiguously demonstrated as the main conduction mechanism for large bandgap SAMs, exhibit- ing well-known temperature and length dependencies. Inelastic electron tunneling spectroscopy exhibits clear vibrational modes of the molecules in the device, pre- senting the ?rst direct evidence of the presence of molecules in a molecular device.
Citation: Introducing Molecular Electronics
Publisher: Springer, New York, NY
Pages: 24 pp.
Keywords: self-assembled monolayers,tunneling
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (824KB)