| Author(s): |
Allen R. Hefner Jr; David W. Berning; Colleen E. Hood; |
| Title: |
Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices |
| Published: |
April 04, 2005 |
| Abstract: |
Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes. |
| Conference: |
GOMACTech |
| Proceedings: |
GOMAC Digest of Technical Papers |
| Pages: |
pp. 226 - 229 |
| Location: |
Las Vegas, NV |
| Dates: |
April 4-7, 2005 |
| Keywords: |
high-voltage;measurement systems;performance metrics;power semiconductor;Silicon-carbide |
| Research Areas: |
Electronics & Telecommunications |
| PDF version: |
 Click here to retrieve PDF version of paper (453KB) |
