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Publication Citation: Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

NIST Authors in Bold

Author(s): Allen R. Hefner Jr.; David W. Berning; Colleen E. Hood;
Title: Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices
Published: April 04, 2005
Abstract: Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.
Conference: GOMACTech
Proceedings: GOMAC Digest of Technical Papers
Pages: pp. 226 - 229
Location: Las Vegas, NV
Dates: April 4-7, 2005
Keywords: high-voltage,measurement systems,performance metrics,power semiconductor,Silicon-carbide
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (464KB)