NIST logo

Publication Citation: AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors

NIST Authors in Bold

Author(s): Joseph J. Kopanski; Erik Collart;
Title: AVS Newsletter Conference Report USJ-2003: The Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Published: October 30, 2003
Abstract: USJ-2003 provided an international forum for a broad ranging discussion of the current and future needs for ultra-shallow junctions, new ideas for fabrication of ultra-shallow junctions, recent advancements of analytical characterization techniques, and modeling of the two- and three-dimensional aspects of ultra-shallow junctions. The workshop attracted 132 attendees: 107 regular attendees, 12 invited speakers, and 13 exhibitors. Of the attendees, 98 (74%) were from the US, 24 were from Europe (19%), and 9 were from Asia (7%). A total of 88 papers were submitted to the workshop; 40 (46%) were from the US, 37 (42%) were from Europe, and 11 (13%) were from Asia.
Citation: American Vacuum Society Newsletter
Pages: pp. 13 - 14
Keywords: Conference Report, front-end process, ultra-shallow junctions, USJ;
Research Areas: