Hite, D.
, Tang, S.
and Sprunger, P.
(2003),
Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7), Chemical Physics Letters
(Accessed April 18, 2024)
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Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)
Published
Author(s)
, Shu-Jung Tang, Phillip T. Sprunger
Abstract
Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.Citation
Chemical Physics Letters
Volume
367
Pub Type
Journals
Keywords
growth, silicide formation, surface
Citation
Created December 31, 2002, Updated October 12, 2021