Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Anomalous Behavior of a Quantized Hall Plateau in a High-Mobility Si Metal-Oxide-Semiconductor Field-Effect Transistor

Published

Author(s)

K. Yoshihiro, C. T. Van Degrift, Marvin E. Cage, D. Yu
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
45
Issue
24

Citation

Yoshihiro, K. , Van Degrift, C. , Cage, M. and Yu, D. (1992), Anomalous Behavior of a Quantized Hall Plateau in a High-Mobility Si Metal-Oxide-Semiconductor Field-Effect Transistor, Physical Review B (Condensed Matter and Materials Physics) (Accessed March 28, 2024)
Created June 1, 1992, Updated October 12, 2021