Stacked SNS Josephson Junction Arrays for Quantum Voltage Standards

Published

June 1, 2003

Author(s)

Paul Dresselhaus, Yonuk Chong, J. Plantenberg, Samuel Benz

Abstract

NIST is using and developing superconductor-normal metal-superconductor (SNS) Josephson arrays for both programmable DC and AC voltage standards. Increasing the output voltage is difficult because the output voltage per junction is small; hence series arrays with large numbers of junctions are needed. The best way to generate higher voltages and achieve the best operating margins for the broadband drive signals is by densely packing the junctions into shorter arrays. NIST has been working on stacked SNS junctions to achieve this goal. By stacking junctions in the array, more junctions may be placed per length, while remaining a lumped microwave element. In this paper we introduce our results on stacked SNS junctions using MoSi₂ and Ti as barrier materials. These barriers were chosen because they can be reactive ion etched (RIE) in contrast to our standard PdAu barriers which must be wet etched. Using RIE, alternating layers of barrier material and Nb may be etched in a single step. We indirectly quantify the junction uniformity in the arrays by measuring the current range of the constant voltage steps when the arrays are biased with a microwave drive.

Citation

IEEE Transactions on Applied Superconductivity

Volume

13

Issue

2

Pub Type

Journals

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Keywords

superconducting films, thin film devices, digital-analog conversion, superconducting devices

Citation

Dresselhaus, P. , Chong, Y. , Plantenberg, J. and Benz, S. (2003), Stacked SNS Josephson Junction Arrays for Quantum Voltage Standards, IEEE Transactions on Applied Superconductivity, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30315 (Accessed April 19, 2024)