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Publication Citation: An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

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Author(s): Allen R. Hefner Jr;
Title: An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)
Published: October 01, 1990
Abstract:
Citation: IEEE Transactions on Power Electronics
Volume: 5
Issue: 4
Pages: pp. 459 - 468
Research Areas: Electronics & Telecommunications
PDF version: PDF Document Click here to retrieve PDF version of paper (831KB)