Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry

Published

July 1, 1999

Author(s)

Huibin Zhu, Allen R. Hefner Jr., Jih-Sheng Lai

Abstract

The significance of interconnect parasitics of power electronics system is their affects on converters' EMI-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, and the like.  In this paper, a time domain reflectometry (TDR) measured-based modeling technique is used to characterize interconnect parasitics in switching power converters.  The TDR technique is introduced briefly at first.  Then the instrumentation setup and procedures for modeling of power electronic interconnects are described.  Experiments are conducted on typical elements of a high-power inverter, including IGBT modules, busbar, and bulk capacitors.  It is shown that the lead inductances of the module can be characterized completely using TDR.  It is also shown that the busbar has an equivalent circuit model of four transmission line segments, and the capacitor has a significant interconnect inductance.

Citation

IEEE Transactions on Power Electronics

Volume

14

Pub Type

Journals

Download Paper

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Keywords

IGBT, interconnect characterization, interconnect modeling, reflectometry, time domain

Citation

Zhu, H. , Hefner, A. and Lai, J. (1999), Characterization of Power Electronics System Interconnect Parasitics Using Time Domain Reflectometry, IEEE Transactions on Power Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=11233 (Accessed April 18, 2024)