Presentations from the 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
- Overview Of 3D Integration Requirements
Sitaram Arkalgud, SEMATECH
- Synchrotron-Based Nanocharacterization
Pierre Bleuet, European Synchrotron Radiation Facility
- Characterization of Integrated Nano Materials
Amal Chabli, CEA-LETI
- Research Challenges for CMOS Scaling: Industry Directions
T.C. Chen, IBM
- Metrology for Emerging Materials, Devices, and Structures: Graphene as an Example
Alain Diebold, College of Nanoscale Science and Engineering, SUNY Albany
- A 3D Stacked Nanowire Technology - Applications in Advanced CMOS and Beyond
Thomas Ernst, CEA-LETI
- Boron Nanowires for Flexible Electronics and Field Emission
Hongjun Gao and Jifa Tian, Institute of Physics, CAS, Beijing, China
- Application of TOF-SIMS and LEIS for the Characterization of Ultra-Thin Films
Thomas Grehl, ION-TOF GmbH
- Mask Metrology – Current and Future Challenges
Greg Hughes, SEMATECH
- Innovation: the 4th Factor of Production
G. Dan Hutcheson, VLSI Research, Inc.
- Dark-Field Holography for the Measurement of Strain at the Nanoscale
Martin Hytch, CEMES-CNRS, nMat Group
- Aberration-Corrected Electron Microscopy for Nanoelectronics Applications
Christian Kisielowski, National Center for Electron Microscopy
- Nanoscale Measurement Methods for Novel Material Characterization
J. Alex Liddle, CNST, NIST
- Challenges and Opportunities for Modeling and Simulation
Mark Lundstrom, Network for Computational Nanotechnology, Purdue University
- Scanning Single Electron Transistor Microscopy on Graphene
Jens Martin, Harvard University
- Nanotechnology: Impact on Metrology
Meyya Meyyapan, NASA Ames Research Center
- Simulations of Scatterometry Down to 22 nm Structure Sizes and Beyond
Wolfgang Osten, University Stuttgart
- Understanding Imaging and Metrology with the Helium Ion Microscope
Michael Postek, NIST
- Nanoelectronics Landscape In Europe: New Opportunities for Research and Innovation
Gisele Roesems, European Commission, DG Information Society and Media
- Conference Opening Slides
David Seiler, NIST
- Improved Resolution and New Analysis Capabilities
Michael Steigerwald, Carl Zeiss SMT
- Enabling Technologies for <20nm Generations
Hans Stork, Applied Materials
- Progress towards Low Vacuum Critical Dimension Metrology
Brad Thiel, CNSE
- FINFET Doping: Fabrication and Metrology Challenges
Wilfried Vandervorst, IMEC
- Scaling Effects on Ferro-Electrics: Application in Nanoelectronics and Characterization
Bertrand Vilquin and Brice Gautier, Université de Lyon
- Facts and Artifacts in Atom Probe Tomography
Francois Vurpillot, GPM UMR 6634, Universite de Rouen, ERIS
- Overview of the Nanoelectronics Research Initiative
Jeff Welser, SRC Nanoelectronics Research Initiative
- Energy Filtered PEEM
Konrad Winkler, Omicron NanoTechnology GmbH
- Cross Sectional Characterization of Planar and Non-Planar Nanostructures Using X-Ray Scattering
Wen-li Wu, NIST
- X-Ray Microscopy for Interconnect Characterization
Wenbing Yun, CTO
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