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Thin Film Deposition and Processing

Reliably deposit and anneal a wide variety of metal, semiconductor, and insulator films using thermal, sputter, electron beam, chemical vapor, and atomic layer sources with sub-nanometer precision.


E-beam Evaporator #1: Denton Infinity 22

This is a dual electron gun/thermal evaporator for the deposition of metal and dielectric thin films

  • pc part >= 5 mm squareE-beam Evaporator-Denton Infinity 22
  • wafer: 50 mm to 150 mm round
  • Dome Capacity: (4) wafers
  • Cryopumped with base vacuum of 8 x 10-8 Torr
  • Uniformity shield and dome rotation yield uniformity of 5% over 100 mm wafer
  • 6-pocket electron gun
  • (2) electrodes for thermal evaporation
  • Full automatic or manual operation including multilayer deposition
  • Restriction: 200 nm maximum per layer. Exceptions possible on case-by-case basis
  • Materials available: Ag, Al, Al-1%Si, Au, Co, Cr, Cu, Fe, Ge, Gd, Mo, Nb, Ni, Ni/Fe 81/19 wt%, Pd, Permalloy, Pt, Ta, Ti, V, W, Y, Yb, Al2O3, MgO, Si, SiO2, TiO2
Applications: Metallization for electrical contacts, dry etch masks, lift-off process, magnetic studies


E-beam Evaporator #2: Denton Infinity 22

This is an electron gun evaporator for the deposition of metal and dielectric thin films

  • pc part >= 5 mm squareE-beam Evaporator-Denton Infinity 22
  • wafer: 50 mm to 150 mm round
  • Planetary capacity: (4) wafers for 100 mm and 150 mm, (8) wafers for 75 mm and 50 mm
  • Cryopumped with base vacuum of 8 x 10-8 Torr
  • Double rotation wafer planetary yielding uniformity of 3% over 100 mm wafer
  • 6-pocket electron gun
  • Full automatic or manual operation including multilayer deposition
  • Ion gun fitted with Oxygen for ion assisted deposition of dielectrics and Argon for oxide removal prior to deposition
  • Restriction: 200 nm maximum per layer. Exceptions possible on case-by-case basis
  • Materials Available: Ag, Al, Al-1%Si, Au, Co, Cr, Cu, Fe, Ge, Gd, Mo, Nb, Ni, Ni/Fe 81/19 wt%, Pd, Permalloy, Pt, Ta, Ti, V, W, Y, Yb, Al2O3, MgO, Si, SiO2, TiO2
Applications: Metallization for electrical contacts, dielectrics deposition, dry etch masks, lift-off process, magnetic materials


Sputterer #1: Denton Discovery 550

This physical vapor deposition tool uses Argon ions generated in a plasma to sputter atoms off a target and deposit them as a thin film on a substrate. It is equipped with (2) DC and (2) RF guns.

  • pc part >= 5 mm squareSputterer-Denton discovery 22
  • wafer: up to 150 mm round
  • Stage Capacity: (1) 150 mm or 100 mm, (2) 75 mm or (4) 50 mm wafers
  • Turbo-pumped with base vacuum of 2 x 10-7 Torr
  • Rotating stage yields 3% uniformity over 100 mm wafer
  • Stage temperature: room to 350°C
  • 600 W power supplies
  • Touch screen user interface: layers programmed sequentially
  • (4) target materials loaded
  • Co-sputtering capability from one RF and one DC gun
  • Argon bombardment can be used to remove native oxide on wafers
  • Oxygen available for reactive sputtering
  • Targets available:
    • Metals: Ag, Al, Al-1%Si, Au, Co, Co/Fe/B 72/18/10 wt%, Cr, Cu, Fe, Gd, Mo, Nb, Ni/Fe 81/19 wt%, Pd, Permalloy (Ni/Fe/Mo/Mn 79/16.7/4/0.3 wt%), Pt, Ta, Ti, V, W, W/Ti 90/10 wt%
    • Semiconductors: Ge (undoped), Si-n, Si-p, Si (undoped)
    • Oxides, nitrides, carbides: Al2O3, ITO, Li3PO4, LiCoO2, MgO, Si3N4, SiC, SiO2, Ta2O5, TiN, TiO2, WC, ZnO, ZrO2 (with 12 wt% Y2O3)
Applications:
  • Metals: electrical contacts, dry etch masks, magnetic materials
  • Oxides, nitrides: electrical isolation, etching masks

Sputterer #2: Denton Vacuum Discovery 550

This physical vapor deposition tool uses Argon ions generated in a plasma to sputter atoms off a target and deposit them as a thin film on a substrate. It is equipped with (2) DC and (2) RF guns.

  • pc part >= 5 mm squareSputterer: Denton Vacuum Discovery-550
  • Wafer: up to 150 mm round
  • Stage capacity: (1) 150 mm or 100 mm, (2) 75 mm or (4) 50 mm wafers
  • Turbo-pumped with base vacuum of 2 x 10-7 Torr
  • Rotating stage yields 3% uniformity over 100 mm wafer
  • Stage temperature: room to 350°C
  • 600 W power supplies
  • One magnetically enhanced gun for ferromagnetic materials
  • Windows XP interface enables unattended sequencing of multilayers
  • (4) target materials loaded
  • Co-sputtering capability from one RF and one DC gun
  • Argon bombardment can be used to remove native oxide on wafers
  • Oxygen and nitrogen available for reactive sputtering
  • Targets available:
    • Metals: Ag, Al, Al-1%Si, Au, Co, Co/Fe/B 72/18/10 wt%, Cr, Cu, Fe, Gd, Mo, Nb, Ni/Fe 81/19 wt%, Pd, Permalloy (Ni/Fe/Mo/Mn 79/16.7/4/0.3 wt%), Pt, Ta, Ti, V, W, W/Ti 90/10 wt%
    • Semiconductors: Ge (undoped), Si-n, Si-p, Si (undoped)
    • Oxides, nitrides, carbides: Al2O3, ITO, Li3PO4, LiCoO2, MgO, Si3N4, SiC, SiO2, Ta2O5, TiN, TiO2, WC, ZnO, ZrO2 (with 12 wt% Y2O3)
Applications:
  • Metals: electrical contacts, dry etch masks, magnetic materials
  • Oxides, nitrides: electrical isolation, etching masks
 

General Thermal Oxidation and Diffusion Furnace/Bank 2

This four stack furnace system is utilized to grow silicon dioxide, general anneal and sinter.

Applications: General Furnace
  • Silicon Dioxide Growth
    • Wet Oxide (Tube 1)-typically used for field isolation, masking layers, oxides greater than 120 nm, and optical applications.
    • Dry Oxide (Tube 2)-slow controlled growth, oxides less than 120 nm.
  • Forming Gas Anneal (Tube 3)
    • Aluminum Sinter, anneal.
  • General Anneal (Tube 4)
    • Nitrogen ambient anneals.
Sample Sizes:
  • 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) wafers. 
  • Maximum wafer thickness: 2.5 mm
Restrictions:
  • Silicon Wafers Allowed.
  • Pyrex and glass slides permitted with temperatures below melting point!
  • All other substrates need approval.
  • Max. Temperature 1100 °C.
Demonstrated use: Etch masking layers, insulation layers


CMOS Thermal Oxidation and Diffusion Furnace/Bank 1

This four-stack furnace bank is used for the thermal growth of silicon dioxide and diffusion by solid source.

Applications:CMOS furnace
  • Silicon Dioxide Growth
    • Wet Oxide (Tube 1)-typically used for field isolation, masking layers, oxides greater than 120 nm, gate dielectric studies, and optical applications.
    • Dry Oxide (Tube 2)-CMOS gate growth, slow controlled growth, oxides less than 120 nm.
  • Boron Solid Source Diffusion (Tube 3)
    • Wafer doping technique for P-type applications.
  • Phosphorus Solid Source Diffusion (Tube 4)
    • Wafer doping for N-type applications.
Sample Sizes:
  • 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) wafers. 
  • Maximum wafer thickness: 2.5 mm.
Restrictions:
  • The dry oxide tube (Tube 2) and the wet oxide tube (Tube 1) are for CMOS applications only.
  • Requires quarterly monitoring and monthly Trans-LC cleans.
  • No Metals.
  • Use only Teflon tweezers, green wafer tweezers, or vacuum wand.
  • RCA Cleaning required before processing.
  • Silicon Wafers Only
  • Max. Temp 1100 °C.
Demonstrated use: Etch masking layers, Insulation layers, Sub-2nm gate dielectric


Low Pressure Chemical Vapor Deposition (LPCVD) Furnace/Bank 3

This three stack furnace system is utilized to deposit silicon nitride, polysilicon and low temperature oxide (LTO).

Applications:LPCVD Furnace
  • Tube 1 (T1), open for future upgrade.
  • Silicon Nitride Deposition (Tube 2)
    • Low Stress recipe.
    • Stoichiometric recipe.
    • Waveguides, passivation layer, masking layer, dielectric applications.
    • Low stress nitride for membrane fabrication
  • Polysilicon Deposition (Tube 3).
    • Undoped and in-situ N-doped.
    • Silicon gate devices.
    • Use as conductors.
  • LTO-Low Temperature Oxidation (Tube 4)
    • Inter level metal isolation.
    • Low temperature process < 450 °C.
Sample Sizes:  75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) wafers. 

Restrictions: No photoresist or plastic substrates.

Demonstrated use: Etch masking layers, insulation layers, low stress silicon nitride for membranes


Rapid Thermal Annealer-Modular Process Technology

This system uses 21-1200W lamps to control temperature ramps and steady state temperatures from 250 degrees to 1200 degrees C anneals.

Applications:Rapid Thermal Annealer
  • Short time, high temperature anneals.
  • Growth of Silicon Dioxide.
  • Activate dopants after ion-implant.
  • CVD glass reflows.
  • Sintering.
Sample Size: Pieces; 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) wafers. 

Restrictions: Silicon Wafers only


Atomic Layer Deposition: Oxford FlexALRPT

A tool for alternatively coating single atomic layers layer by layer using saturative surface reactions. Both thermal and/or plasma processes are available.

Applications:Oxford FlexAL RPT
  • Precisely controlled ultra-thin and pin-hole free film
  • Layer stacks
  • Nano-structure or 3D structure coating.
    • Oxides: SiO2, Al2O3, TiO2, HfO2
    • Nitrides: AlN, TiN
    • Metals: Ru
Example Use: Nanolaminates (TiO2/Al2O3, SiO2/Al2O3); Nanostructureconformal coating


Parylene Deposition System: Specialty Coating Systems PDS-2010

This system deposits conformal coatings of Parylene N or C. Parylene is applied at room temperature.

  • Parylene Dep System
  • The raw material dimer is vaporized under vacuum and heated to a gas which is pyrolized to cleave the dimer to its monomeric form. In the room temperature deposition chamber, the monomer gas deposits as a transparent polymer film.
  • The thickness of coatings can range from the hundreds of angstroms to several tens of micrometers.
  • Two chamber sizes accommodate substrates from millimeters across to a maximum of 31 cm-diameter x 28 cm-height)
Applications:
  • These polymers are widely used in medical devices and for electronics and automotive application.
  • Coatings are biocompatible and biostable and pinhole-free.
  • Material provide moisture, chemical and dielectric barriers, as well as low coefficient of friction.
Examples use:
  • Back substrate for polymer after delamination from wafer surface.
  • Electrical isolation for submerged components

Wafer Bonder: Suss Microtec SB6e


The new Suss wafer bonder works in conjunction with the Suss MA6 mask Aligner.

  • Capable of 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) wafer bonding
  • Can use various substrate materials depending on bonding application
  • User friendly Windows-based system
  • There are several types of bonding capabilities available: Thermal Compression, Anodic, Eutectic, Glass Frit, Fusion, SOI, Adhesive, and Temporary
 
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