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Lithography

Pattern features from < 10 nm to micrometers in size on wafers up to 200 mm in diameter using electron beam, nanoimprint, laser, and optical lithography; create masks on-site for features as small as 700 nm; step-and-repeat across wafers with 5X reduction lithography.


E-beam Lithography System: Vistec VB300

This system enables direct writing of advanced nanolithography patterns on wafers or masks. 

  • Resolution: < 4 nmE-beam Lithography System - Vistec VB300
  • Linewidth: <10 nm
  • Stitching and overlay accuracy: ≤15 nm (mean + 3 sigma)
  • 100 keV
  • 50 MHz, 20 bits for high throughput and pattern accuracy
  • Pieceparts to 150 mm wafers ( with 300 mm capability)
  • 7-inch mask capability
  • 10-wafer air-lock capacity
Applications:
  • Nano-lithography
  • Patterning resist coated substrates from small irregular-sized chip pieces to 200 mm wafers.
Demonstrated use: Nanoscale contacts, sub-20 nm gratings and contacts, mix-and-match exposures.  


E-beam Lithography System: JEOL JBX 6300-FS

This system enables direct writing of advanced nanolithography patterns on wafers at fast writing speeds up to 50 MHz.

  • 100 kV accelerating voltageE-beam Lithography System - JEOL JBX 6300-FS
  • 2 nm minimum spot size
  • 50 MHz scanning rate
  • 19 bit DAC resolution
  • 0.5 mm max write field (4th lens)
  • 150 x 190 mm write area
  • 0.62 nm stage movement precision
  • < 20 nm stitching & overlay accuracy
Demonstrated use: Sub-20 nm gratings and dots, magnetic nano-pillars, photonic devices  


ASML i-Line Stepper: PAS 5500/275

This projection stepper utilizes 5X reduction lithography to transfer photomask patterns onto substrates.

  • Resolution ≤ 280 nmASML i-Line Stepper
  • Overlay accuracy ≤ 40 nm
  • Aerial illumination with numerical Aperature: 0.48 – 0.6
  • The number and placement of the dies are programmable.
  • Sample sizes: Handles variable sample sizes up to 200 mm (8") wafer (default: 100 mm)
  • Sample thickness ≤ 1.0 mm
  • Max field size (die size on wafers): [22 mm x 22 mm] or [27.4 mm x 14.7 mm]
  • Fully automated step and repeat exposure (stepper). Throughput ≥ 84 wph.
  • Reticle sizes: 6" x 6" at thickness 0.25", 0.15" and 0.12".
Applications:
  • Device and pattern shrinkage: Provides 5:1 reduction of mask pattern with a variable field size and high alignment accuracy.
  • Multiple patterns in selected locations in one wafer with different exposure condition.
  • Image sensors, photovoltaic devices and bio-chips.


Laser Pattern Generator: Heidelberg DWL 2000

The system uses a laser to expose photoresist for substrate patterning. The fast high resolution laser pattern generator can be used for chrome on glass photomask production and maskless direct substrate writing.

Features:
  • Expose substrates up to 200 mm in diameterLaser Pattern Generator: Heidelberg DWL 2000
  • Substrate thickness up to 7 mm
  • 405 nm wavelength laser
  • Feature size down to 0.7 um
  • Write speed of 110 mm2/minute
  • Address grid of 20 nm
  • Optical Autofocus
  • Accepts DXF, GDS-II, CIF and Gerber data formats
  • Alignment system for exposing patterns on existing structures
  • Closed loop environment system
Applications:
  • micrometer- and sub-micrometer lithography
  • Patterning photomask blanks as well as direct patterning of substrates up to 200 mm in diameter
  • Photomasks for both contact and stepper lithography
  • Patterning to substrate edge with optical autofocus

Demonstrated use: In-house photomask design and prototyping. Direct write substrate exposure and alignment  


Nano-Imprint Lithography Tool: Nanonex NX-2000

This tool creates a pattern in a thin resist by embossing from a mold. The pattern is later transferred to the wafer by reactive ion etching.

  • Pieceparts up to 150 mm wafers Nanonex NX-2000
  • Nitrogen cushion pressure ensures uniformity
  • Imprint temperature from room to 300 °C
  • Heating rate >5 °C/s
  • Cooling rate >2 °C/s
  • Capable of UV-curable as well as thermoplastic resists
  • High throughput: capable of <60 s per wafer
  • Feature size down to 10 nm
Applications:
  • Nanoscale patterning
  • Polymer or Sol-gel nano device fabrication
  • Polymer property study
Demonstrated Use: Nano-Magnetic media; Bio-Nanomatrix; Polymer nanostructure property; Surface film transfer
 

Nanonex Ultra-100

Integrated UV-Ozone Cleaner / Molecular Vapor Coater

A tool to coat per-fluorinated hydrophobic self-assembled monolayer on mold or other material surfaces in vapors

  • Vapor chemical coatingNanonex Ultra-100
  • N2 gas purge
  • UV Ozone clean
Applications:
  • Nanoimprint mold treatment
  • Surface wetting control
  • Surface lubrication
  • Device packaging (moisture barrier)
Demonstrated Use: Nanoimprint mold release layer coating; Photo-mask anti-stick layer coating; Surface clean; Surface chemical modification
 

MA6 Front and Back Contact Aligner: Suss Microtec

This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.

  • UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available.MA6 front side contact aligner: Suss Microtec
  • Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
  • Mask size: 63 mm x 63 mm (2.5 in x 2.5 in), 102 mm x 102 mm (4 in x 4 in), 127 mm x 127 mm (5 in x 5 in) and 178 mm x 178 mm (7 in x 7 in).
  • Wafer size for Top-Side Alignment: up to 150 mm (6 in) in diameter or small samples: 50 mm, 75 mm, 100 mm, and 150 mm (2 in, 3 in, 4 in, and 6 in).
  • Wafer size for Bottom-Side Alignment: 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) in chucks
  • Maximum wafer thickness: 3 mm
Applications:
  • Printing micrometer sized and larger features on resist coated substrates.
  • Top and bottom side alignment to existing pattern
  • Bond Alignment for Suss Microtec SB6e
Demonstrated use: Optical photoresist patterning for etching masks, metal lift-off, cured films for permanent applications
 

MA8 Front Side Contact Aligner: Suss Microtec

This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.

  • UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available.MA8 front side contact aligner: Suss Microtec
  • Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
  • Mask size: 63 mm x 63 mm (2.5 in x 2.5 in), 102 mm x 102 mm (4 in x 4 in), 127 mm x 127 mm (5 in x 5 in) and 178 mm x 178 mm (7 in x 7 in).
  • Wafer size for Top-Side Alignment: up to 150 mm (6 in) in diameter or small samples: 50 mm, 75 mm, 100 mm, and 150 mm (2 in, 3 in, 4 in, and 6 in).
  • Wafer size for Bottom-Side Alignment: 75 mm, 100 mm, and 150 mm (3 in, 4 in, and 6 in) in chucks
  • Maximum wafer thickness: 3 mm
Applications:
  • Printing micrometer sized and larger features on resist coated substrates.
  • Top side alignment to existing pattern
Demonstrated use: Optical photoresist patterning for etching masks, metal lift-off, cured films for permanent applications
 

Bachur & Associates LS-200FSX Photoresist Stabilization System

This system is used to perform DUV flood exposure or resist surface curing.

  • User-settable intensity levels > 10 mW/cm2 @ 254 nmBachur & Associates LS-200FSX Photoresist Stabilization System
  • Beam uniformity over 200 mm diameter < 5%
  • Wafer size up to 200 mm
  • Hot plate: 50 °C to 200 °C with controllable ramping rate
  • Temperature uniformity: ± 2 °C across 200 mm working area
  • Built-in timer and nitrogen ambient.
Applications:
  • Flood exposure of photo resists
  • Resist hardening for better etch/implant/ion milling resistance 


Spinners: Brewer Science CEE Model 100CB Spinner/Hotplate

These systems are used to produce uniform resist coatings to be used in photo- and electron beam-lithography.

  • Manual dispense of resistBrewers Science CEE Model 100CB Spinner/Hotplate
  • Wafer sizes up to 8"
  • 6000 RPM maximum speed
  • Additional wafer chuck can accommodate small samples
  • Hot plate – 300 °C maximum temperature
  • Three bake methods: proximity, soft contact and hard contact
  • Temperature resolution: 0.1 °C
  • Temperature uniformity: 0.3 % across working surface
  • Ability to store user programs
Applications:
  • Manual dispense for resist coatings
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