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Dry Etch

Reactive ion etching, ion milling, and chemical vapor etching for processing silicon, oxides, nitrides, polymers, metals, III-V compounds, alloys, ceramics, and multilayer structures.


Multipurpose Plasma Etcher System 1

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200 mm in diameter under variable temperatures.

Applications: ICP deep silicon etcher.jpg
  • High-temperature InP etching
  • Physical milling of most III-V semiconductors
  • Reactive etching of III-V semiconductors
  • Reactive etching of metals
Example Use:III-V material and Metals etch

Multipurpose Plasma Etcher System 2

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch Si, SiO2 and SiNx on planar substrates up to 200 mm in diameter under variable temperatures.

Applications: Plasma etcher system: Deep SiO2.jpg
  • Anisotropic etching of SiO2 and SiNx
  • Low Temperature Si anisotropic etching
  • CF4 (in Si/SiO2 etching)
  • Anisotropic polymer etching
  • Photo-resist etching and descum
Example Use: Deep SiO2; Si Nanostructure, Polymer, SiNx and others

Deep RIE-Unaxis SHUTTLELINE DSEII

A tool for etching deep Si-trench by "Bosch" process on planar substrates up to 150 mm in diameter.

  • ICP deep silicon etcher.jpg
  • Etching of Silicon at rates from 1 µm/min to 15 µm/min
  • Selectivity to SiO2 ≥ 100 to 1
  • Selectivity to Photoresist ≥ 40 to 1
  • ICP: 2.4 MHz, 250 W
  • RF: 13.56 MHz, 300 W
  • Gases: C4F8, SF6, O2, N2, Ar
Applications: Deep Si etch

Demonsrated Use: Bosch deep Si etch, MEMS, Nanopositioners, Cantilevers, Thermal conductors

Metal RIE-Unaxis 790

A system based on Argon and Fluorine gases to etch metal and dielectric materials on planar substrates up to 200 mm in diameter.

  • RF: 13.56 MHzMetal RIE-Unaxis 790
  • Power: 500 W
  • Gases: Ar, CHF3, CF4, SF6, O2
Applications:
  • Physical milling of most metals
  • Anisotropic etching of metal films
  • Anisotropic etching of SiO2 and SiNx
Demonstrated Use: Au, Ni, Co, TiW, SiO2 and Metal oxide surface clean

Silicon RIE-Unaxis 790

A system based on Oxygen and Fluorine gases to etch polymer and dielectric materials on planar substrates up to 200mm in diameter.

  • RF: 13.56 MHzSilicon RIE-Unaxis 790
  • Power: 500 W
  • Gases: CHF3, CF4, SF6, N2O, O2
Applications:
  • Anisotropic thin film etch
  • Etches Silicon Dioxide, Silicon Nitride, Silicon, and Organics
  • Descum and Oxygen cleaning
  • SiNx Membrane
Demonstrated Use: SiO2, SiNx and Si thin film and nanostructure etching; Photoresist descum; Nanoimprint resist residual etching; Organic residual clean


ICP Metal Etcher-Unaxis SHUTTLELINE ICP

Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150 mm in diameter.

  • ICP: 2.0 MHz, 2500 WICP Metal Etcher-Unaxis Shuttleline ICP
  • RF: 13.56 MHz, 300 W
  • Gases: Cl2, Ar, BCl3, SF6, O2
Applications:
  • Anisotropic etching of metal films
  • Etches Chromium, Aluminum, and other Chlorine-based etchable metals
  • Other materials etchable by SF6, Ar, and O2
Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch


SPTS µEtch Hydrofluoric Acid (HF) Vapor Etcher

The SPTS µEtch is a single wafer hydrofluoric acid vapor etcher used to release silicon microstructures in MEMS devices using a combination of liquid hydrofluoric acid and alcohol to create a vapor that isotropically etches silicon dioxide without etching silicon and without damaging fragile suspended structures. The tool is capable of creating microscale and nanoscale silicon structures that are freely suspended by etching a sacrificial layer of silicon dioxide underneath the silicon device layer on substrates from small pieces up to 200 mm wafers.

Photograph of SPTS micro-Etch Hydrofluoric Acid Vapor Etcher Specifications/Capabilities:
  • PLC recipe system for precise control of etch parameters.
  • Isotropic etching of silicon dioxide without etching silicon.
  • Maximum wafer diameter: 200 mm.
  • Small pieces supported: Yes. 
 
Applications:
  • Microelectromechanical systems (MEMS).
  • Nanoelectromechanical systems (NEMS).
  • Accelerometers.
  • Ink jet heads. 
  • Pressure sensors. 



XeF2 Silicon Etch-Xactix Xetch e1 Series

This system uses Xenon difluoride vapor to etch silicon.

Applications:XeF2 Silicon Etch-Xactix Xetch e1 Series
  • Almost infinite selectivity of Silicon to photoresist, silicon dioxide, silicon nitride and Aluminum.
  • Utilizes Xenon Difluoride (XeF2) in vapor phase.
Sample Size: Pieces up to 150 mm (6 in) wafers.

Restrictions:
  • Silicon substrates allowed.
  • All other materials must be approved.
  • Glass and Silicon Substrates allowed.
Demonstrated use: Release etch for membranes, cantilevers and other suspended devices.


PVA Tepla 300 Microwave Plasma System

A tool using microwave oxygen plasma to remove organics on the surfaces

  • Frequency: 2.45 GHzmicrowave asher
  • Power: 100 W
  • No Cr, AG exposed to the surface
Applications:
  • Surface cleaning after processes including ion implant, plasma etching, and sputter etching.
  • Surface cleaning of semiconductor wafers after wet etch chemical process.
  • Surface cleaning after extended storage.
  • Removal of organic passivation layers and resist.
Demonstrated Use: Post dry/wet etching surface clean, Wafer recycle


Ion Milling System: 4Wave

This system makes use of a broad argon ion beam to controllably and uniformly remove material from a wafer or wafer piece.

Features:Ion Mill
  • Milling of metals (such as Au, Co, Cu, Fe, Ir, Mn, Ni, Permalloy, Pd, Pt, Ta, W) and dielectrics (such as AlN, Al2O3, SiO2, SiNx, Ta2O5, TiO2)
  • Gridded ion source: 20 cm in diameter; provides collimated, high energy ion flux
  • Plasma bridge neutralizer prevents charging at sample surface
  • Small samples and up to 150 mm wafers
  • Etch uniformity: 2.5% over 130 mm diameter
  • Sample rotation: 0 to 20 rpm
  • Sample temperature maintained below 80 °C
  • Sample tilt from 0 to 135 degrees for tailoring of sidewalls and minimizing re-deposition
  • Base vacuum: 5 x 10-8 Torr
  • SIMS endpoint detector to determine the etching endpoints at or near the interface of almost any two dissimilar materials, allowing users to terminate etches with better than 0.2 nm accuracy
  • SIMS can detect the composition of ion mill by-products for up to four materials at one time
  • Future capability will include Reactive Ion beam Etching (RIBE) using SF6, CF4, CHF3 and O2
Applications:
  • Spin valves fabrication
  • Spintronics
  • Magnetic sorage
  • Sample thinning for TEM and cross-sectioning for SEM
  • MEMS etching
  • Grating fabrication
  • Communications and microwave components
  • Biomedical sensors
  • Fiber Optics components
Demonstrated Use: Very large arrays of nano-holes (150 nm in diameter) in gold layers on 150 mm-diameter wafers; MEMs fabrication

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