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Dry Etch

Reactive ion etching, ion milling, and chemical vapor etching for processing silicon, oxides, nitrides, polymers, metals, III-V compounds, alloys, ceramics, and multilayer structures.


Multipurpose Plasma Etcher System 1

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200 mm in diameter under variable temperatures.

Applications: ICP deep silicon etcher.jpg
  • High-temperature InP etching
  • Physical milling of most III-V semiconductors
  • Reactive etching of III-V semiconductors
  • Reactive etching of metals
Example Use:III-V material and Metals etch

Multipurpose Plasma Etcher System 2

Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch Si, SiO2 and SiNx on planar substrates up to 200 mm in diameter under variable temperatures.

Applications: Plasma etcher system: Deep SiO2.jpg
  • Anisotropic etching of SiO2 and SiNx
  • Low Temperature Si anisotropic etching
  • CF4 (in Si/SiO2 etching)
  • Anisotropic polymer etching
  • Photo-resist etching and descum
Example Use: Deep SiO2; Si Nanostructure, Polymer, SiNx and others

Deep RIE-Unaxis SHUTTLELINE DSEII

A tool for etching deep Si-trench by "Bosch" process on planar substrates up to 150 mm in diameter.

  • ICP deep silicon etcher.jpg
  • Etching of Silicon at rates from 1 µm/min to 15 µm/min
  • Selectivity to SiO2 ≥ 100 to 1
  • Selectivity to Photoresist ≥ 40 to 1
  • ICP: 2.4 MHz, 250 W
  • RF: 13.56 MHz, 300 W
  • Gases: C4F8, SF6, O2, N2, Ar
Applications: Deep Si etch

Demonsrated Use: Bosch deep Si etch, MEMS, Nanopositioners, Cantilevers, Thermal conductors

Metal RIE-Unaxis 790

A system based on Argon and Fluorine gases to etch metal and dielectric materials on planar substrates up to 200 mm in diameter.

  • RF: 13.56 MHzMetal RIE-Unaxis 790
  • Power: 500 W
  • Gases: Ar, CHF3, CF4, SF6, O2
Applications:
  • Physical milling of most metals
  • Anisotropic etching of metal films
  • Anisotropic etching of SiO2 and SiNx
Demonstrated Use: Au, Ni, Co, TiW, SiO2 and Metal oxide surface clean

Silicon RIE-Unaxis 790

A system based on Oxygen and Fluorine gases to etch polymer and dielectric materials on planar substrates up to 200mm in diameter.

  • RF: 13.56 MHzSilicon RIE-Unaxis 790
  • Power: 500 W
  • Gases: CHF3, CF4, SF6, N2O, O2
Applications:
  • Anisotropic thin film etch
  • Etches Silicon Dioxide, Silicon Nitride, Silicon, and Organics
  • Descum and Oxygen cleaning
  • SiNx Membrane
Demonstrated Use: SiO2, SiNx and Si thin film and nanostructure etching; Photoresist descum; Nanoimprint resist residual etching; Organic residual clean


ICP Metal Etcher-Unaxis SHUTTLELINE ICP

Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150 mm in diameter.

  • ICP: 2.0 MHz, 2500 WICP Metal Etcher-Unaxis Shuttleline ICP
  • RF: 13.56 MHz, 300 W
  • Gases: Cl2, Ar, BCl3, SF6, O2
Applications:
  • Anisotropic etching of metal films
  • Etches Chromium, Aluminum, and other Chlorine-based etchable metals
  • Other materials etchable by SF6, Ar, and O2
Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch


XeF2 Silicon Etch-Xactix Xetch e1 Series

This system uses Xenon difluoride vapor to etch silicon.

Applications:XeF2 Silicon Etch-Xactix Xetch e1 Series
  • Almost infinite selectivity of Silicon to photoresist, silicon dioxide, silicon nitride and Aluminum.
  • Utilizes Xenon Difluoride (XeF2) in vapor phase.
Sample Size: Pieces up to 150 mm (6 in) wafers.

Restrictions:
  • Silicon substrates allowed.
  • All other materials must be approved.
  • Glass and Silicon Substrates allowed.
Demonstrated use: Release etch for membranes, cantilevers and other suspended devices.


PVA Tepla 300 Microwave Plasma System

A tool using microwave oxygen plasma to remove organics on the surfaces

  • Frequency: 2.45 GHzmicrowave asher
  • Power: 100 W
  • No Cr, AG exposed to the surface
Applications:
  • Surface cleaning after processes including ion implant, plasma etching, and sputter etching.
  • Surface cleaning of semiconductor wafers after wet etch chemical process.
  • Surface cleaning after extended storage.
  • Removal of organic passivation layers and resist.
Demonstrated Use: Post dry/wet etching surface clean, Wafer recycle


Ion Milling System: 4Wave

This system makes use of a broad argon ion beam to controllably and uniformly remove material from a wafer or wafer piece.

Features:Ion Mill
  • Milling of metals (such as Au, Co, Cu, Fe, Ir, Mn, Ni, Permalloy, Pd, Pt, Ta, W) and dielectrics (such as AlN, Al2O3, SiO2, SiNx, Ta2O5, TiO2)
  • Gridded ion source: 20 cm in diameter; provides collimated, high energy ion flux
  • Plasma bridge neutralizer prevents charging at sample surface
  • Small samples and up to 150 mm wafers
  • Etch uniformity: 2.5% over 130 mm diameter
  • Sample rotation: 0 to 20 rpm
  • Sample temperature maintained below 80 °C
  • Sample tilt from 0 to 135 degrees for tailoring of sidewalls and minimizing re-deposition
  • Base vacuum: 5 x 10-8 Torr
  • SIMS endpoint detector to determine the etching endpoints at or near the interface of almost any two dissimilar materials, allowing users to terminate etches with better than 0.2 nm accuracy
  • SIMS can detect the composition of ion mill by-products for up to four materials at one time
  • Future capability will include Reactive Ion beam Etching (RIBE) using SF6, CF4, CHF3 and O2
Applications:
  • Spin valves fabrication
  • Spintronics
  • Magnetic sorage
  • Sample thinning for TEM and cross-sectioning for SEM
  • MEMS etching
  • Grating fabrication
  • Communications and microwave components
  • Biomedical sensors
  • Fiber Optics components
Demonstrated Use: Very large arrays of nano-holes (150 nm in diameter) in gold layers on 150 mm-diameter wafers; MEMs fabrication

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