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NanoFab Tool and Processing Rates
Effective 6/1/11
The NanoFab rates are based on the actual costs of operating each tool and process. Reduced rates are available only for non-proprietary projects that advance the CNST mission to support the development of nanotechnology from discovery to production. For such projects, the CNST shares the associated NanoFab costs, directly contributing from the CNST research budget the difference between the reduced rates charged to the user and the full cost recovery rates. See the User Information links for additional information on access, application, and payment policies.
Tool |
Full Rate ($/hr) |
Reduced Rate ($/hr) |
| Cleanroom Occupancy Rate | 62 | 31 |
| Includes Wet Chemistry, Metrology Equipment (Ellipsometer, Reflectometer, Profilometer, Optical Microscope, 4-Point Probe) | ||
| Processing Services | 137 | 137 |
| Does not include base NanoFab use or Specific Tool fees | ||
| Specific Tools | ||
| Wafer Bonder | 184 | 74 |
| Dicing Saw | 116 | 47 |
| Wire Bonder | 145 | 58 |
| Critical Point Dryer | 128 | 51 |
| CMOS Dry Ox | 182 | 73 |
| CMOS Wet Ox | 182 | 73 |
| Boron Doping (P-type) | 94 | 38 |
| Phos. Doping (N-type) | 94 | 38 |
| Gen. Dry Ox | 94 | 38 |
| Gen. Wet Ox | 94 | 38 |
| Anneal | 94 | 38 |
| Sinter | 94 | 38 |
| RTA | 194 | 78 |
| JEOL E-beam | 940 | 376 |
| Vistec E-beam | 1174 | 470 |
| Laser Writer | 160 | 64 |
| Nano-imprinter | 164 | 66 |
| ZEISS FESEM | 157 | 63 |
| ZEISS FIB | 318 | 127 |
| FEI FIB 1 | 420 | 168 |
| FEI FIB 2 | 420 | 168 |
| AFM 1 | 155 | 62 |
| AFM 2 | 155 | 62 |
| Unaxis Deep Si Etcher | 160 | 64 |
| Unaxis ICP Etcher | 224 | 89 |
| Oxford Etcher 1 | 160 | 64 |
| Oxford Etcher 2 | 160 | 64 |
| Unaxis RIE 1 | 141 | 56 |
| Unaxis RIE 2 | 141 | 56 |
| XeF2 Silicon Etcher | 141 | 56 |
| Microwave Asher | 93 | 37 |
| E-Beam Evap 1 | 157 | 63 |
| Sputter 1 | 157 | 63 |
| Sputter 2 | 157 | 63 |
| PECVD | 166 | 66 |
| Poly LPCVD | 165 | 66 |
| SiN LPCVD | 160 | 64 |
| LTO LPCVD | 160 | 64 |
| E-Beam Evap 2 | 173 | 69 |
| Atomic Layer Deposition | 128 | 51 |
| Parylene Deposition | 103 | 41 |
| Suss MA6 | 69 | 28 |
| Suss MA8 | 69 | 28 |
| TEM | TBD | TBD |