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LPCVD Furnace: Tystar Mini Tytan 4600

Description:

CORAL Names:  SiN LPCVD, Poly LPCVD, LTO LPCVD

This three stack furnace system is utilized to deposit silicon nitride, polysilicon, and low temperature oxide (LTO)

Specifications / Capabilities:

  • 3", 4", and 6" wafers
  • No photoresist or plastic substrates

Scientific Opportunities / Applications:

  • Tube 1 (T1), open for future upgrade
  • Silicon Nitride Deposition (Tube 2)
    • Low Stress recipie
    • Stoiciometric recipie
    • Waveguides, passivation layer, masking layer, dielectric applications
    • Low stress nitride for membrane fabrication
  • Polysilicon Deposition (Tube 3)
    • Silicon gate devices
    • Use as conductors
  • LTO-Low Temperature Oxidation (Tube 4)
    • Inter level metal isolation
    • Low temperature process < 450 °C

Access Information:

Access to this tool requires that you have attended NanoFab safety orientation, passed the safety test, and have been properly trained on the tool. If you have any questions, please contact the NanoFab User Coordinator, or the tool contact person.

NANOFAB USER MANUAL

SCHEDULE TRAINING

lpcvd_furnace

Operating Schedule:

Access to this machine follows standard NanoFab operating hours (7am - 7pm Monday - Friday).  Out of hours access requires prior approval by the NanoFab Manager.

Contact

Name: Jerry Bowser
Phone: 301.975.8187
Email: nanofab_furnaces@nist.gov
Address:
100 Bureau Drive, Stop 6201
Gaithersburg, MD 20899.6201