NIST logo
*

CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Description:

CORAL Names:  CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)

This four-stack furnace bank is used for the thermal growth of silicon dioxide and diffusion by solid source.

Specifications / Capabilities:

  • Silicon Dioxide Growth
    • Wet Oxide (Tube 1)-typically used for field isolation, masking layers, oxides greater than 120 nm, gate dielectric studies, and optical applications
    • Dry Oxide (Tube 2)-CMOS gate growth, slow controlled growth, oxides less than 120 nm
  • Boron Solid Source Diffusion (Tube 3)
    • Wafer doping technique for P-type applications
  • Phosphorus Solid Source Diffusion (Tube 4)
    • Wafer doping for N-type applications
  • 3", 4", and 6" wafers
  • Maximum wafer thickness:  2.5 mm
  • The dry oxide tube (Tube 2) and the wet oxide tube (Tube 1) are for CMOS applications only
  • Requires quarterly monitoring and monthly Trans-LC cleans
  • No Metals
  • Use only teflon tweezers, green wafer tweezers, or vacuum want
  • RCA Cleaning required before processing
  • Silicon Wafers Only
  • Max. Temp 1100 °C

Scientific Opportunities / Applications:

  • Etch masking layers
  • Insulation layers
  • Sub-2nm gate dielectric

Access Information:

Access to this tool requires that you have attended NanoFab safety orientation, passed the safety test, and have been properly trained on the tool. If you have any questions, please contact the NanoFab User Coordinator, or the tool contact person.

NANOFAB USER MANUAL

SCHEDULE TRAINING

cmos_furnace

Operating Schedule:

Access to this machine follows standard NanoFab operating hours (7am - 7pm Monday - Friday).  Out of hours access requires prior approval by the NanoFab Manager.

Contact

Name: Jerry Bowser
Phone: 301.975.8187
Email: nanofab_furnaces@nist.gov
Address:
100 Bureau Drive, Stop 6201
Gaithersburg, MD 20899.6201