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NanoFab Tool: JEOL JBX 6300-FS Direct Write Electron Beam Lithography System


The JEOL JBX 6300-FS direct write electron beam lithography system allows users to quickly and directly pattern a variety of substrate materials with feature sizes as small as 10 nm. The high precision stage provides excellent pattern stitching and can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.  


  • Accelerating voltage: 100 keV.
  • Spot size: 2 nm.
  • Scan rate: 50 MHz.
  • DAC resolution: 19 bit.
  • Write field: 0.5 mm (4th lens).
  • Step and scan writing to pattern large areas.
  • Stitching accuracy: < 20 nm.
  • Overlay accuracy: < 20 nm.
Supported Sample Sizes:
  • Maximum wafer diameter: 200 mm (8 in).
  • Small pieces supported: Yes.
Typical Applications:
  • Microphotonic and nanophotonic devices.
  • High density magnetic nanopillars.
  • CMOS devices.
  • MEMs and NEMs structures.
  • Dot arrays and lines with feature sizes < 20 nm.
Photograph of the JEOL JBX 6300-FS Direct Write Electron Beam Lithography System.

NEMO Name: JEOL E-beam

Location: Building 216 Rm. G107

Hours of Operation:
24-hour access
Hourly Rate:
Standard Reduced
$556 $299
Training Hourly Rate:
Individual Group
$433 $217

Training Time: Depends on user experience and process requirements; typically 6 hours.

Richard Kasica, Primary Engineer
Marc Cangemi, Backup Engineer
100 Bureau Drive, Stop 6201
Gaithersburg, MD 20899-6201