Nikolai Klimov

Nikolai Klimov is a CNST/UMD Postdoctoral Researcher working jointly in the Electron Physics Group in the CNST and the Fundamental Electrical Metrology Group in the EEEL. He received B.S. and M.S. degrees in Physics and Applied Mathematics (summa cum laude) from the Moscow Institute of Physics and Technology, and a Ph.D. in Experimental Condensed Matter Physics from Rutgers University. Nikolai's doctoral research focused on experimental investigations of quantum interference effects in the conductivity of high-mobility Si MOSFETs at ultra-low temperatures. At NIST, Nikolai is developing methods to fabricate and characterize novel, high-quality graphene electronic devices, and investigating possibilities for a new graphene-based quantum resistance standard.

• Interaction Effects in the Conductivity of a Two-valley Electron System in High-mobility Si Inversion Layer, N.N. Klimov, D.A. Knyazev, O.E. Omel'yanovskii, V.M. Pudalov, H. Kojima, and M.E. Gershenson, Physical Review B 78, 195308 (2008).
• Intervalley Scattering and Weak Localization in Si-based Two-dimensional Structures, Yu.A. Kuntsevich, N.N. Klimov, S.A. Tarasenko, N.S. Averkiev, V.M. Pudalov, H. Kojima, and M.E. Gershenson, Physical Review B 75, 195330 (2007).
• Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime, V.M. Pudalov, M.E. Gershenson, N.N. Klimov, and H. Kojima, Letters to Journal of Experimental and Theoretical Physics 82, 371-376 (2005).