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Electronic Nanodevices

Left: Contact metal imprinting on self-assembled monolayers. Right: Fabrication using integrated shadow masks and angled evaporation of metal. 40 nm x30 nm and 1900 nm x250 nm junctions.

The program is focused on providing the measurement capability to enable the integration of novel materials into electronic nanodevices. As traditional Complementary Metal-Oxide-Semiconductor (CMOS) electronics reaches the physical limits of scaling, new materials are being broadly screened for the purpose of extending scaling and for new applications beyond computation. Many potentially important materials such as thin organic and some inorganic layers or nanoscale objects such as chemically synthesized quantum dots or biopolymers are either completely incompatible with the standard patterning techniques or the patterning process can significantly alter the final electronic properties of the devices. By enabling the electrical characterization at the intermediate stages of fabrication we evaluate alternative patterning schemes to assess the material transformations during the processing.


Related Projects

Nanoscale patterning of novel electronic materials
Sensors on scanning probes
Electronic transport in nanoscale organic/inorganic devices

Staff

Nikolai Zhitenev - NIST
Suyong Jung - University of Maryland
Behrang Hamadani - NIST