Publication Citation (NIST authors in bold)
Authors:	Stan, G. , King, S. , Cook, R. F.
Title:	Elastic modulus of low-k dielectric thin films measured by load-dependent contact-resonance atomic force microscopy
Published:	September 14, 2009
Abstract:	Correlated force and contact-resonance versus displacement responses have been resolved using load-dependent contact-resonance atomic force microscopy (AFM) to determine the elastic modulus of low-k dielectric thin films. The measurements consisted of recording simultaneously both the deflection and resonance frequency shift of an AFM cantilever-probe as the probe was gradually brought in and out of contact. As the applied forces were restricted to the range of adhesive forces, low-k dielectric films of elastic modulus varying from GPa to hundreds of GPa were measurable in this investigation. Over this elastic modulus range, the reliability of load-dependent contactresonance AFM measurements was confirmed by comparing these results with that from picosecond laser acoustics measurements.
Citation:	Journal of Materials Research
Volume:	24
Issue:	9
Pages:	pp. 2960-2964
Keywords:	nanomechanical properties, atomic force microscopy, low-k dielectric films
Research Area:	Characterization, Nanometrology, and Nanoscale Measurements;
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