Publication Citation (NIST authors in bold)
Authors:	Regan, R. , Atwater, H. A., Guyer, J. E., Meserole, E. , Gorrsky, M. S.
Title:	Kinetics Governing Phase Separation of Nanostructured Sn(x)Ge(1a 'x) Alloys.
Published:	June 05, 2006
Abstract:	We have studied the dynamic phenomenon of SnxGe1a 'x/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates.Phase-separation leads to the formation of direct bandgap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed SiYGe-1-y/Ge(001) virtual substrates. The experimental results are compared with a kinetic linear instability model and the experimental results show good agreement with this theoretical model for phase separation during dynamic growth.
Citation:	Physical Review B (Condensed Matter and Materials Physics)
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Keywords:	Asaro-Tiller, decomposition, solute expansion, Stranski-Krastanov
Research Area:	Materials Science;
PDF version:	Click here to retrieve PDF version of paper (625 K)