Publication Citation (NIST authors in bold)
Authors:	Birdwell, A. , Littler, C. , Glosser, R. , Rebien, M. , Henrion, W. , Stauss, P. , Behr, G.
Title:	Evidence for an Indirect Gap in B−FeSi2 Epilayers by Photoreflectance Spectroscopy
Published:	May 27, 2008
Abstract:	Photoreflectance spectra obtained from epitaxial films of semiconducting B−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.9340.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.8230.002 eV at 75 K.
Citation:	Applied Physics Letters
Volume:	92
Issue:	211901
Pages:	3 pp.
Research Area:	Semiconductors;
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