Publication Citation (NIST authors in bold)
Authors:	Campbell, J. P., Cheung, K. P., Suehle, J. S., Oates, A.
Title:	Negative-Bias Temperature Instability Induced Electron Trapping
Published:	July 21, 2008
Abstract:	Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/de-trapping mechanism or hydrogen depassivation mechanism. In this study, we present NBTI-induced changes in the peak transconductance which indicate the presence of a third mechanism involving electron trapping/de-trapping. The presence of this electron trapping/de-trapping component adds further complexity to the very complicated NBTI phenomenon.
Citation:	Applied Physics Letters
Volume:
Issue:
Pages:	3 pp.
Keywords:	negative-bias temperature instability, electron trapping, hole trapping
Research Area:	Semiconductors;
PDF version:	Click here to retrieve PDF version of paper (180 K)