Publication Citation (NIST authors in bold)
Authors:	Campbell, J. P., Cheung, K. P., Suehle, J. S., Oates, A.
Title:	Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Published:	June 17, 2008
Abstract:	We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron trapping/detrapping behavior is only observable for very fast measurement times (<10usecs) and has significant implications to the current understanding of the NBTI phenomenon and consequent lifetime predictions.
Conference:	2008 Symposium on VLSI Technology
Proceedings:	Proceedings of the 2008 Symposium on VLSI Technology
Pages:	pp. 76-77
Location:	Honolulu, HI
Dates:	June 17-19, 2008
Keywords:	NBTI, electron trapping, hole trapping, fast-IDVG
Research Area:	Semiconductors;
PDF version:	Click here to retrieve PDF version of paper (312 K)